Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
Aguirre F. L., Miranda E., Suñé J., Hofmann K., Oster T., Hochberger C., Gehrunger J., Petzold S., Vogel T., Kaiser N., Piros E., Alff L.quantum conductance, resistive switching
| Document type | Article |
| Journal title / Source | Scientific Reports |
| Volume | 14 |
| Issue | 1 |
| Publisher's name | Springer Science and Business Media LLC |
| Publisher's address (city only) | Dordrecht, GX, Netherlands |
| Publication date | 2024-1-11 |
| ISSN | 2045-2322 |
| DOI | 10.1038/s41598-023-49924-2 |
| Language | English |