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Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks

Aguirre F., Alff L., Suñé J., Hochberger C., Hofmann K., Oster T., Gehrunger J., Petzold S., Vogel T., Kaiser N., Piros E., Miranda E.
Keywords:

oxide memristor, artificial neural networks

Document type Article
Journal title / Source APL Machine Learning
Volume 1
Issue 3
Publisher's name AIP Publishing
Publisher's address (city only) Melville, NY, United States
Publication date 2023-7
ISSN 2770-9019
DOI 10.1063/5.0143926
Language English

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Information

Name of Call / Funding Programme
EMPIR 2020: Fundamental