Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks
Aguirre F., Alff L., Suñé J., Hochberger C., Hofmann K., Oster T., Gehrunger J., Petzold S., Vogel T., Kaiser N., Piros E., Miranda E.oxide memristor, artificial neural networks
Document type | Article |
Journal title / Source | APL Machine Learning |
Volume | 1 |
Issue | 3 |
Publisher's name | AIP Publishing |
Publisher's address (city only) | Melville, NY, United States |
Publication date | 2023-7 |
ISSN | 2770-9019 |
DOI | 10.1063/5.0143926 |
Language | English |