Quantum Dipole Effects in a Silicon Transistor under High Electric Fields
Saito S., Li Z., Yoshimoto H,, Tomita I., Tsuchiya Y., Sasago Y., Arimoto H., Liu F., Husain M.K., Hisamoto D., Rutt H.N., Kurihara S.Si, CMOS, transistor, quantum dipole, Heisenberg model
| Document type | Article |
| Journal title / Source | Journal of the Physical Society of Japan |
| Volume | 87 |
| Issue | 9 |
| Page numbers / Article number | 094801 |
| Publisher's name | Physical Society of Japan |
| Publication date | 2018-9-15 |
| ISSN | 0031-9015, 1347-4073 |
| DOI | 10.7566/jpsJ.87.094801 |
| Language | English |