The gateway to Europe's
integrated metrology community.

Single Carrier Trapping and De-trapping in Scaled Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

Li Zuo , Husain Muhammad, Yoshimoto Hiroyuki , Tani Kazuki, Byers James, Sasago Yoshitaka, Hisamoto Digh, Fletcher Jonathan, Kataoka Masaya, Tsuchiya Yoshishige, Saito Shinichi
Keywords:

Coulomb blockade, MOSFETs, Carrier Trapping and De-trapping, quantum dots

Document type Article
Journal title / Source Semiconductor Science and Technology
Publisher's name IOP Publishing
Publication date 2017-3-24
ISSN 0268-1242, 1361-6641
DOI 10.1088/1361-6641/aa6910
Language English

Back to the list view

Information

Name of Call / Funding Programme
EMPIR 2015: SI Broader Scope