Resistive switching and role of interfaces in memristive devices based on amorphous NbO grown by anodic oxidation
Leonetti G., Fretto M., Bejtka K., Olivetti E.S., Pirri F.C, De Leo N., Valov I., Milano G.Resistive switching, niobium oxide, anodic oxidation
Document type | Article |
Journal title / Source | Physical Chemistry Chemical Physics |
Publisher's name | Royal Society of Chemistry (RSC) |
Publisher's address (city only) | Cambridge, United Kingdom |
Publication date | 2023 |
ISSN | 1463-9076, 1463-9084 |
DOI | 10.1039/D3CP01160G |
Language | English |