Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
Limame I., Shih C-W, Koltchanov A., Heisinger F., Nippert F., Plattner M., Schall J., Wagner M.R., Rodt S., Klenovsky P., Reitzenstein S.epitaxial growth, theoretical modeling, multi-layer, site-controlled quantum dot, InGaAs quantum dot
| Document type | Article |
| Journal title / Source | Applied Physics Letters |
| Volume | 124 |
| Issue | 6 |
| Page numbers / Article number | 061102 |
| Publisher's name | AIP Publishing |
| Publisher's address (city only) | Melville, NY, United States |
| Publication date | 2024-2 |
| ISSN | 0003-6951, 1077-3118 |
| DOI | 10.1063/5.0187074 |
| Language | English |