Transport properties in silicon nanowire transistors with atomically flat interfaces
Liu F., Husain M.K., Li Z., Sotto M.S.H., Burt D., Fletcher J.D., Kataoka M., Tsuchiya Y., Saito S.narrow channel effect, silicon nanowire, SOI, TMAH, self-limiting oxidation
| Document type | Proceedings |
| Journal title / Source | 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) |
| Publisher's name | IEEE |
| Publication date | 2017-2-28 |
| Conference name | 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) |
| Conference date | 28-02-2017 to 02-03-2017 |
| Conference place | Toyama |
| DOI | 10.1109/EDTM.2017.7947561 |
| Web URL | https://eprints.soton.ac.uk/402316/ |
| Language | English |