The gateway to Europe's
integrated metrology community.

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Maldonado D., Castán H., Dueñas S., Miranda E., Campabadal F., Jiménez-Molinos F., González M.B., García H., Cantudo A., Aguirre F.L., Aldana S., Vinuesa G., Roldán J.B.
Keywords:

resistive switching

Document type Article
Journal title / Source Materials Science in Semiconductor Processing
Volume 169
Page numbers / Article number 107878
Publisher's name Elsevier BV
Publisher's address (city only) Amsterdam, NX, Netherlands
Publication date 2024-1
ISSN 1369-8001
DOI 10.1016/j.mssp.2023.107878
Language English

Back to the list view

Information

Name of Call / Funding Programme
EMPIR 2020: Fundamental