The gateway to Europe's
integrated metrology community.

Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities

Milano G., Boarino L., Valov I., Ricciardi C.
Keywords:

nanowires, ZnO, chemical vapor deposition (CVD), resistive switching,memristive devices, neuromorphic devices

Document type Article
Journal title / Source Semiconductor Science and Technology
Volume 37
Issue 3
Page numbers / Article number 034002
Publisher's name IOP Publishing
Publication date 2022-1-28
ISSN 0268-1242, 1361-6641
DOI 10.1088/1361-6641/ac4b8a
Web URL https://iopscience.iop.org/article/10.1088/1361-6641/ac4b8a
Language English

Back to the list view

Information

Name of Call / Funding Programme
EMPIR 2020: Fundamental