Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing
Nieto Hernández E., Yağcı H. B., Pugliese V., Aprà P., Cannon J. K., Bishop S. G., Hadden J., Ditalia Tchernij S., Olivero P., Bennett A. J., Forneris J.Semiconductors, Confocal microscopy, Crystallographic defects, Annealing, Ion implantation, Optical properties, Photoluminescence spectroscopy, Photons, Nitrides, Photoemission
| Document type | Article |
| Journal title / Source | Applied Physics Letters |
| Volume | 124 |
| Issue | 12 |
| Page numbers / Article number | 124003 |
| Publisher's name | AIP Publishing |
| Publisher's address (city only) | Melville, NY, United States |
| Publication date | 2024-3-18 |
| ISSN | 0003-6951, 1077-3118 |
| DOI | 10.1063/5.0185534 |
| Language | English |