Observing and measuring strain in nanostructures and devices with transmission electron microscopy
Hytch MH, Minor AMMNanostructure, silicon, stress/strain relationship, transmission electron microscopy
Document type | Article |
Journal title / Source | MRS Bulletin |
Peer-reviewed article | 1 |
Volume | 39 |
Issue | 2 |
Page numbers / Article number | 138-146 |
Publisher's name | Cambridge University Press |
Publisher's address (city only) | Cambridge |
Publication date | 2014-2-12 |
ISSN | 0883-7694 |
DOI | 10.1557/mrs.2014.4 |
Web URL | https://www.cambridge.org/core/journals/mrs-bulletin/article/observing-and-measuring-strain-in-nanostructures-and-devices-with-transmission-electron-microscopy/296C465E63EC9AEB189EFFE7AA4C1116 |
Language | English |