Fast Wafer-Level Characterization of Silicon Photodetectors by Photoluminescence Imaging
Vahanissi V., Yli-Koski M., Heinonen J., Rauha I.T.S., Forbom C.W., Ayedh H.M., Savin H.Photodetectors, photoluminescence imaging (PLI), process monitoring, recombination/generation lifetime, silicon (Si)
| Document type | Article |
| Journal title / Source | IEEE Transactions on Electron Devices |
| Volume | 69 |
| Issue | 5 |
| Page numbers / Article number | 2449-2456 |
| Publisher's name | Institute of Electrical and Electronics Engineers (IEEE) |
| Publisher's address (city only) | Piscataway, NJ, United States |
| Publication date | 2022-5 |
| ISSN | 0018-9383, 1557-9646 |
| DOI | 10.1109/TED.2022.3159497 |
| Web URL | https://ieeexplore.ieee.org/document/9743485 https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9743485 |
| Language | English |