Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4‐TCNQ
Yin Y., Chatterjee A., Momeni D., Kruskopf M., Götz M., Wundrack S., Hohls F., Pierz K., Schumacher H.W.epitaxial graphene on SiC, F4-TCNQ, graphene functionalization, molecu- lar doping, quantum Hall resistance, quantum resistance metrology
| Document type | Article |
| Journal title / Source | Advanced Physics Research |
| Publisher's name | Wiley |
| Publisher's address (city only) | Hoboken, NJ, United States |
| Publication date | 2022-10-21 |
| ISSN | 2751-1200, 2751-1200 |
| DOI | 10.1002/apxr.202200015 |
| Web URL | https://onlinelibrary.wiley.com/doi/full/10.1002/apxr.202200015 |
| Language | English |